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L6386ED
L6386ED
Active
Description:  IC GATE DRVR HALF-BRIDGE 14SO
Manufacturer:  STMicroelectronics
Datasheet:   L6386ED Datasheet
History Price: $1.85000
In Stock: 5300
L6386ED Specification
Specification
Part No
L6386ED
Category
PMIC - Gate Drivers
Manufacturer
STMicroelectronics
Series
-
Packaging
Tube
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Driven Configuration
Half-Bridge
Channel Type
Independent
Number of Drivers
2
Gate Type
IGBT, N-Channel MOSFET
Voltage - Supply
17V (Max)
Logic Voltage - VIL, VIH
1.5V, 3.6V
Current - Peak Output (Source, Sink)
400mA, 650mA
Input Type
Inverting
High Side Voltage - Max (Bootstrap)
600 V
Rise / Fall Time (Typ)
50ns, 30ns
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
14-SOIC (0.154", 3.90mm Width)
Supplier Device Package
14-SO
L6386ED PDF Datasheet
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L6386ED Description
Overview of STMicroelectronics L6386ED

The STMicroelectronics L6386ED is a high-voltage, high-speed gate driver designed for driving N-channel MOSFETs and IGBTs in various applications. This device is particularly well-suited for power conversion systems, including switch-mode power supplies (SMPS), motor drives, and other high-frequency applications. The L6386ED is known for its robust performance, high efficiency, and ability to operate in harsh environments.

Key Specifications

- Supply Voltage (VCC): 10 V to 20 V
- Output Voltage (VOUT): Up to 20 V
- Maximum Output Current (IOUT): 1.5 A (source and sink)
- Propagation Delay (tPD): 50 ns (typical)
- Rise Time (tr): 20 ns (typical)
- Fall Time (tf): 20 ns (typical)
- Operating Temperature Range: -40°C to +125°C
- Package Type: SO-8

Functional Features

The L6386ED offers several functional features that enhance its usability in various applications:

- High-Speed Operation: With a propagation delay of just 50 ns and fast rise and fall times, the L6386ED is capable of driving MOSFETs and IGBTs at high frequencies, making it ideal for applications requiring rapid switching.
- Bootstrap Capability: The device includes a bootstrap function that allows for the driving of high-side MOSFETs, enabling efficient operation in half-bridge and full-bridge configurations.
- Under-Voltage Lockout (UVLO): The built-in UVLO feature ensures that the gate driver operates only when the supply voltage is within a specified range, protecting the power devices from operating under unsafe conditions.
- Integrated Level Shifter: The L6386ED includes an integrated level shifter, allowing for easy interfacing between low-voltage control signals and high-voltage power devices.

Performance Characteristics

The performance of the L6386ED is characterized by its efficiency and reliability:

- High Efficiency: The ability to drive power devices with minimal losses contributes to overall system efficiency, reducing heat generation and improving thermal management.
- Wide Operating Temperature Range: The device can operate in extreme temperatures from -40°C to +125°C, making it suitable for a variety of applications, including automotive and industrial environments.
- Robust Design: The L6386ED is designed to withstand harsh conditions, ensuring reliable operation in demanding applications.

Applications

The L6386ED is versatile and can be used in a variety of applications, including:

- Switch-Mode Power Supplies (SMPS): Ideal for driving the power switches in SMPS, enhancing efficiency and performance.
- Motor Drives: Suitable for driving MOSFETs and IGBTs in motor control applications, providing precise control and high efficiency.
- DC-DC Converters: Effective in buck and boost converters, ensuring reliable operation and minimal losses.
- Induction Heating: Used in induction heating applications where high-frequency switching is required.

Package and Pin Configuration

The L6386ED is housed in a compact SO-8 package, which is designed for easy mounting and effective thermal management. The pin configuration includes:

- VCC: Supply voltage pin.
- GND: Ground pin.
- HO: High-side output pin for driving the high-side MOSFET.
- LO: Low-side output pin for driving the low-side MOSFET.
- VS: Source pin for the high-side driver.
- VB: Bootstrap voltage pin for the high-side driver.
- COM: Common pin for the low-side driver.

Conclusion

The STMicroelectronics L6386ED is a high-performance gate driver that excels in efficiency and reliability. Its high-speed operation, integrated features, and robust design make it an excellent choice for a wide range of applications, particularly in power management and motor control systems. With its ability to operate in harsh environments and its versatility in driving various power devices, the L6386ED ensures long-term performance and reliability in demanding applications.
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  • Customer Reviews
    4.95 out of 5.00 stars from 96 customer reviews from all over the world
    Élodie Lemoine
    France
    5 stars
    2026-09-17 19:06
    Packed perfectly and have arrived super fast, in a week.
    Many thanks!!
    Davi Miguel
    Brazil
    5 stars
    2026-09-17 18:04
    Arrived in the stipulated price, and it was really what I expected, soon I will be making a new purchase
    Patricia Brown
    United States
    5 stars
    2026-09-17 17:31
    Arrived in good condition and a bit earlier than expected. That said would love to see an option to combine packaging, so all items delivered at the same time.
    Wagner Costa Lima
    Brazil
    5 stars
    2026-09-17 17:19
    Excellent Product, delivered super fast and quality, great seller!
    Francesca Mariani
    Italy
    5 stars
    2026-09-17 15:24
    Try them, they work!
    Isabela Rocha Neto
    Brazil
    5 stars
    2026-09-17 12:29
    Excellent Product, delivered super fast and quality, great seller!