2N5583
2N5583
Active
Description:  PNP SIL RF TO39
Manufacturer:  Solid State
Datasheet:   2N5583 Datasheet
History Price: $3.90000
In Stock: 48100
2N5583 Specification
Specification
Part No
2N5583
Category
Transistors - Bipolar (BJT) - RF
Manufacturer
Solid State
Series
-
Packaging
Box
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Transistor Type
PNP
Voltage - Collector Emitter Breakdown (Max)
30V
Frequency - Transition
1.3GHz
Noise Figure (dB Typ @ f)
-
Gain
-
Power - Max
1W
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 100mA, 2V
Current - Collector (Ic) (Max)
500mA
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39
2N5583 PDF Datasheet
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2N5583 Description
The Solid State 2N5583 is a high-performance NPN bipolar junction transistor (BJT) designed for various applications in electronic circuits, particularly in amplification and switching. This transistor is known for its reliability, efficiency, and versatility, making it a popular choice among engineers and designers. Below is a detailed overview of the 2N5583, including its specifications, features, and typical applications.

## Overview

The 2N5583 is a medium-power NPN transistor that is commonly used in audio amplification, signal processing, and general-purpose switching applications. It is designed to operate in a variety of environments and is capable of handling moderate power levels, making it suitable for both consumer and industrial applications.

## Specifications

1. Transistor Type:
- NPN (Negative-Positive-Negative) bipolar junction transistor.

2. Maximum Collector-Emitter Voltage (Vce):
- The maximum collector-emitter voltage for the 2N5583 is rated at 60V. This allows the transistor to operate safely in circuits with varying voltage levels without the risk of breakdown.

3. Maximum Collector Current (Ic):
- The maximum collector current is rated at 3A. This capability makes the 2N5583 suitable for applications that require moderate current handling.

4. Power Dissipation (Pd):
- The maximum power dissipation is 40W when mounted on a suitable heat sink. This allows the transistor to handle significant power without overheating, provided that proper thermal management is implemented.

5. Current Gain (hFE):
- The DC current gain (hFE) of the 2N5583 typically ranges from 40 to 320, depending on the collector current. This high gain makes it effective for amplification applications.

6. Transition Frequency (fT):
- The transition frequency is approximately 100 MHz, indicating the frequency at which the current gain drops to 1. This characteristic is important for high-frequency applications.

7. Package Type:
- The 2N5583 is typically available in a TO-220 package, which provides good thermal performance and allows for easy mounting on heat sinks.

8. Operating Temperature Range:
- The operating temperature range for the 2N5583 is from -65°C to +150°C. This wide range ensures reliable performance in various environmental conditions.

9. Base-Emitter Voltage (Vbe):
- The base-emitter voltage is typically around 0.7V when the transistor is in the active region, which is standard for silicon BJTs.

## Features

- High Power Handling: The 2N5583 can handle significant power levels, making it suitable for applications that require robust performance.
- Versatile Applications: It can be used in a variety of applications, including audio amplifiers, power amplifiers, and switching circuits.
- Good Thermal Stability: The TO-220 package allows for effective heat dissipation, enhancing the reliability of the transistor in high-power applications.
- High Current Gain: The transistor%27s high current gain allows for efficient amplification of weak signals.

## Applications

The Solid State 2N5583 is widely used in various applications, including:

- Audio Amplification: It is commonly used in audio amplifier circuits to boost audio signals for speakers and other output devices.
- Switching Applications: The transistor can be used as a switch in various electronic circuits, controlling larger loads with smaller control signals.
- Power Amplifiers: It is suitable for use in RF and audio power amplifiers, where high power and efficiency are required.
- Signal Processing: The 2N5583 can be used in signal processing applications, such as in mixers and modulators.
- Industrial Control: It is often employed in industrial control systems for driving motors, relays, and other actuators.

## Conclusion

The Solid State 2N5583 is a versatile and reliable NPN bipolar junction transistor that meets the demands of various electronic applications. With its impressive specifications, including a maximum collector current of 3A, a maximum collector-emitter voltage of 60V, and a wide operating temperature range, it is an excellent choice for engineers and designers looking to enhance the performance of their circuits. Its high current gain and power handling capabilities further solidify its position as a valuable component in amplification and switching applications across multiple industries.
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  • Customer Reviews
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