2N6035G
2N6035G
Obsolete
Description:  TRANS PNP DARL 60V 4A TO126
Manufacturer:  onsemi
Datasheet:   2N6035G Datasheet
History Price: Obsolete
In Stock: 22300
2N6035G Specification
Specification
Part No
2N6035G
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
onsemi
Series
-
Packaging
Bulk
Status
Obsolete
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Transistor Type
PNP - Darlington
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (Max)
100μA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A, 3V
Power - Max
40 W
Frequency - Transition
-
Operating Temperature
-65 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
2N6035G PDF Datasheet
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2N6035G Description
The ON Semiconductor 2N6035G is a versatile and widely used silicon-controlled rectifier (SCR) that is designed for various applications in power control and switching. Below is a detailed introduction to the 2N6035G, including its specifications and parameters.

## Overview

The 2N6035G is a four-layer semiconductor device that can control large amounts of current and voltage. It is primarily used in applications such as motor control, light dimming, and heating control. The device is known for its reliability and efficiency in handling high power levels.

## Key Features

1. High Voltage Rating: The 2N6035G can handle a maximum repetitive peak voltage (V_RRM) of 600 volts, making it suitable for high-voltage applications.

2. Current Handling: It has a maximum on-state current (I_T) rating of 35 amperes, allowing it to manage substantial loads effectively.

3. Gate Trigger Current: The device has a low gate trigger current (I_GT), which is typically around 50 mA, enabling it to be triggered easily with minimal input.

4. Thermal Stability: The 2N6035G features good thermal stability, with a maximum junction temperature (T_J) of 150°C, which allows it to operate in demanding environments.

5. Package Type: It is available in a TO-220 package, which provides excellent thermal dissipation and ease of mounting.

## Electrical Specifications

- Repetitive Peak Off-State Voltage (V_RRM): 600 V
- Average On-State Current (I_T(AV)): 35 A
- RMS On-State Current (I_T(RMS)): 50 A
- Gate Trigger Voltage (V_GT): 1.5 to 2.5 V
- Gate Trigger Current (I_GT): 50 mA (typical)
- On-State Voltage (V_T): 1.5 V (typical at I_T = 35 A)
- Holding Current (I_H): 150 mA (minimum)
- Critical Rate of Voltage Rise (dv/dt): 100 V/µs (minimum)
- Critical Rate of Current Rise (di/dt): 100 A/µs (minimum)

## Thermal Characteristics

- Junction-to-Case Thermal Resistance (RθJC): 1.5 °C/W (typical)
- Junction-to-Ambient Thermal Resistance (RθJA): 60 °C/W (typical)
- Maximum Junction Temperature (T_J): 150 °C

## Applications

The 2N6035G is suitable for a variety of applications, including:

- AC Motor Control: Used in speed control circuits for AC motors.
- Light Dimming: Employed in light dimmers for incandescent lamps.
- Heating Control: Utilized in temperature control systems for electric heaters.
- Phase Control: Commonly used in phase control applications for AC loads.

## Conclusion

The ON Semiconductor 2N6035G is a robust SCR that offers high voltage and current handling capabilities, making it an ideal choice for various power control applications. Its reliable performance, combined with its ease of use and thermal stability, makes it a popular choice among engineers and designers in the field of power electronics. Whether for industrial applications or consumer electronics, the 2N6035G provides a dependable solution for controlling electrical power.
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  • Customer Reviews
    4.95 out of 5.00 stars from 79 customer reviews from all over the world
    Hans Müller
    Germany
    5 stars
    2026-03-27 20:25
    I'm very satisfied. Good product as promised and fast delivery. The seller is trustworthy. I will buy from this shop again.
    Anaïs Lemoine
    France
    5 stars
    2026-03-27 15:44
    10mOhms RDSon @6V VGS instead of 3mOhms as per datasheet, unlikely genuine, but good for the price
    Patricia
    Spain
    5 stars
    2026-03-27 15:14
    Sent very fast, the good quality transistors.
    Vanessa Lima Ferreira
    Brazil
    5 stars
    2026-03-27 08:32
    Worked in X99 Bd4
    Adriana
    Brazil
    5 stars
    2026-03-27 00:51
    Great product. Recommend to everyone.
    Esteban Ruiz
    Spain
    5 stars
    2026-03-26 23:46
    All as usual on top!!!