2N3906BU
2N3906BU
Active
Description:  TRANS PNP 40V 0.2A TO92-3
Manufacturer:  onsemi
Datasheet:   2N3906BU Datasheet
History Price: $0.39000
In Stock: 4900
2N3906BU Specification
Specification
Part No
2N3906BU
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
onsemi
Series
-
Packaging
Bulk
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Transistor Type
PNP
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
625 mW
Frequency - Transition
250MHz
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
2N3906BU PDF Datasheet
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2N3906BU Description
Overview of onsemi 2N3906BU

The onsemi 2N3906BU is a widely used NPN bipolar junction transistor (BJT) that is designed for general-purpose amplification and switching applications. This transistor is known for its reliability, versatility, and ease of use, making it a popular choice among engineers and hobbyists alike. The 2N3906BU is particularly suitable for low-power applications in consumer electronics, automotive systems, and industrial control.

Key Specifications

- Type: NPN Bipolar Junction Transistor
- Maximum Collector-Emitter Voltage (Vce): 40 V
- Maximum Collector Current (Ic): 200 mA
- Maximum Power Dissipation (Pd): 500 mW
- DC Current Gain (hFE): 100 to 300 (at Ic = 10 mA)
- Transition Frequency (fT): 250 MHz (typical)
- Package Type: TO-92 (through-hole package)
- Operating Temperature Range: -55°C to +150°C

Performance Characteristics

The 2N3906BU is designed to provide reliable performance in a variety of applications. With a maximum collector-emitter voltage of 40 V, it can handle a wide range of voltage levels, making it suitable for various circuit designs. The maximum collector current of 200 mA allows the transistor to drive moderate loads, making it ideal for switching applications.

Amplification and Switching

The transistor exhibits a DC current gain (hFE) ranging from 100 to 300 at a collector current of 10 mA. This high gain makes the 2N3906BU effective for use in amplification circuits, where it can amplify weak signals. Additionally, its transition frequency of 250 MHz indicates that it can operate effectively at high frequencies, making it suitable for RF applications.

Thermal Performance

The 2N3906BU has a maximum power dissipation rating of 500 mW, which allows it to operate efficiently without overheating in typical applications. The wide operating temperature range of -55°C to +150°C ensures that the transistor can function reliably in various environmental conditions, from extreme cold to high heat.

Applications

The versatility of the 2N3906BU makes it suitable for a wide range of applications, including:

- Signal Amplification: Used in audio amplifiers and signal processing circuits to boost weak signals.
- Switching Applications: Employed in relay drivers, motor control circuits, and other applications requiring reliable switching.
- Consumer Electronics: Found in devices such as televisions, radios, and other electronic equipment for various control functions.
- Automotive Systems: Utilized in automotive electronics for signal processing and control tasks.

Conclusion

The onsemi 2N3906BU is a reliable and versatile NPN bipolar junction transistor that meets the demands of various electronic applications. With its robust specifications, including a wide voltage range, high current gain, and excellent thermal performance, it stands out as an excellent choice for engineers and designers looking to implement effective amplification and switching solutions in their circuits. Its widespread use in consumer electronics, automotive systems, and industrial control further underscores its importance in the field of electronics.
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  • Customer Reviews
    4.95 out of 5.00 stars from 105 customer reviews from all over the world
    Ana Beatriz
    Brazil
    5 stars
    2026-03-28 18:30
    Received. Still were not tested. Thank you
    Renata Cristina Oliveira
    Brazil
    5 stars
    2026-03-28 07:08
    Arrived fast and as described in the ad. Thank you!
    Martín Pacheco
    Spain
    5 stars
    2026-03-28 01:13
    All perfect thank you
    Hans Müller
    Germany
    5 stars
    2026-03-27 20:25
    I'm very satisfied. Good product as promised and fast delivery. The seller is trustworthy. I will buy from this shop again.
    Anaïs Lemoine
    France
    5 stars
    2026-03-27 15:44
    10mOhms RDSon @6V VGS instead of 3mOhms as per datasheet, unlikely genuine, but good for the price
    Patricia
    Spain
    5 stars
    2026-03-27 15:14
    Sent very fast, the good quality transistors.