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VNP35N07-E
VNP35N07-E
Active
Description:  IC PWR DRIVER N-CHAN 1:1 TO220AB
Manufacturer:  STMicroelectronics
Datasheet:   VNP35N07-E Datasheet
History Price: $5.56000
In Stock: 31400
VNP35N07-E Specification
Specification
Part No
VNP35N07-E
Category
PMIC - Power Distribution Switches, Load Drivers
Manufacturer
STMicroelectronics
Series
OMNIFET, VIPower
Packaging
Tube
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Switch Type
General Purpose
Number of Outputs
1
Ratio - Input:Output
1:1
Output Configuration
Low Side
Output Type
N-Channel
Interface
On/Off
Voltage - Load
55V (Max)
Voltage - Supply (Vcc/Vdd)
Not Required
Current - Output (Max)
25A
Rds On (Typ)
280mOhm (Max)
Input Type
Non-Inverting
Features
Status Flag
Fault Protection
Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
VNP35N07-E PDF Datasheet
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VNP35N07-E Description
Overview of STMicroelectronics VNP35N07-E

The STMicroelectronics VNP35N07-E is a high-performance N-channel MOSFET designed for a variety of applications, including automotive, industrial, and consumer electronics. This device is part of the VIPower family, which is known for its robustness, efficiency, and versatility in power management solutions. The VNP35N07-E is particularly well-suited for applications that require high current handling and low on-resistance, making it an ideal choice for power switching and motor control.

Key Specifications

- Type: N-channel MOSFET
- Maximum Drain-Source Voltage (V_DS): 75 V
- Continuous Drain Current (I_D): 35 A (at 25°C)
- Pulsed Drain Current (I_D, pulsed): 100 A
- Gate Threshold Voltage (V_GS(th)): 2.0 V to 4.0 V
- On-Resistance (R_DS(on)): 0.015 Ω (at V_GS = 10 V)
- Total Gate Charge (Q_g): 60 nC (typical)
- Maximum Power Dissipation (P_D): 94 W (at 25°C)
- Operating Temperature Range: -40°C to +150°C
- Package Type: DPAK (TO-252)

Architecture and Features

The VNP35N07-E features a robust N-channel MOSFET architecture that allows for efficient switching and low on-resistance. The device is designed to handle high voltages and currents, making it suitable for demanding applications. The low R_DS(on) value ensures minimal power loss during operation, contributing to overall system efficiency. The device also includes integrated protection features such as thermal shutdown and overcurrent protection, enhancing its reliability in various operating conditions.

Performance Characteristics

- High Voltage Capability: With a maximum V_DS of 75 V, the VNP35N07-E is ideal for high-voltage applications, including automotive power supplies and industrial equipment.
- Low On-Resistance: The low R_DS(on) value minimizes conduction losses, which is critical for applications requiring high efficiency and thermal management.
- Fast Switching Speed: The device's low total gate charge allows for rapid switching, making it suitable for high-frequency applications.
- Thermal Performance: The DPAK package provides excellent thermal dissipation, allowing the MOSFET to operate efficiently even under high load conditions.

Applications

The VNP35N07-E is suitable for a wide range of applications, including:

- Automotive: Used in power management systems, motor drivers, and lighting control.
- Industrial Control: Employed in automation systems, power supplies, and motor control applications.
- Consumer Electronics: Found in devices requiring efficient power switching, such as power adapters and battery management systems.
- Power Management: Utilized in DC-DC converters and power distribution systems.

Development Tools and Support

STMicroelectronics provides a comprehensive suite of development tools and resources for the VNP35N07-E, including evaluation boards, reference designs, and extensive documentation. These resources help engineers quickly prototype and test their applications, ensuring optimal performance and reliability. The availability of application notes and design guidelines further assists in the effective implementation of the device in various applications.

Conclusion

The STMicroelectronics VNP35N07-E is a versatile and efficient N-channel MOSFET that meets the demands of modern power management applications. With its high voltage and current handling capabilities, low on-resistance, and fast switching speed, it provides an effective solution for a variety of industrial, automotive, and consumer electronics applications. The extensive support from STMicroelectronics ensures that engineers have the resources they need to successfully integrate this device into their designs, making it a reliable choice for power management solutions.
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  • Customer Reviews
    4.95 out of 5.00 stars from 131 customer reviews from all over the world
    Jairo Nascimento
    Brazil
    5 stars
    2026-09-21 22:01
    I have not tested yet and then I cannot say whether it works or not!
    Valéria Mendes
    Brazil
    5 stars
    2026-09-21 21:42
    As always the product is great
    Davi Lucas Almeida
    Brazil
    5 stars
    2026-09-21 20:01
    Delivery faster than expected
    Léonie Picard
    France
    5 stars
    2026-09-21 18:28
    No problem-compliant product and nice seller
    Steven Allen
    United States
    5 stars
    2026-09-21 18:24
    Arrived a month earlier. Recommendable
    Alexander King
    United States
    5 stars
    2026-09-21 18:08
    Raoida delivery, all right.