Technical Parameter
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25℃
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
34mOhm @ 33.5A, 15V
Vgs(th) (Max) @ Id
3.6V @ 9.22mA
Gate Charge (Qg) (Max) @ Vgs
109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
2980 pF @ 400 V
Power Dissipation (Max)
271W (Tc)
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
