Technical Parameter
Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
32A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 10 A
Speed
No Recovery Time >500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 μA @ 650 V
Capacitance @ Vr, F
460.5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252-2
Operating Temperature - Junction
-55 ℃ ~ 175 ℃
