Technical Parameter
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25℃
72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
59mOhm @ 50A, 20V
Vgs(th) (Max) @ Id
4V @ 18mA
Gate Charge (Qg) (Max) @ Vgs
188 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
3672 pF @ 1000 V
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
