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2N3501
2N3501
Active
Transistors - Bipolar (BJT) - RF
Description:  BI-POLAR SILICON TRANSISTOR NPN
Manufacturer:  Solid State
Datasheet:   2N3501 Datasheet
History Price: $0.50000
In Stock: 41940
Specification
PDF Datasheet
Compare Parts
Client Reviews
2N3501 Specification
Specification
Part No
2N3501
Category
Transistors - Bipolar (BJT) - RF
Manufacturer
Solid State
Series
-
Packaging
Bulk
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
150V
Frequency - Transition
150MHz
Noise Figure (dB Typ @ f)
-
Gain
-
Power - Max
1W
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Current - Collector (Ic) (Max)
300mA
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39
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    Customer Reviews
    4.95 out of 5.00 stars from 185 customer reviews from all over the world
    Sofía Valentina Castro
    Spain
    5 stars
    2026-09-20 03:15
    Seller's service is very good. But these 5 V regulators are not of quality. Output current is low and stability is small.
    Ugo Fontana
    Italy
    5 stars
    2026-09-20 03:10
    All ok. Perfect
    Fernando Javier
    Spain
    5 stars
    2026-09-20 02:52
    All well I recommend seller
    Léo Dufour
    France
    5 stars
    2026-09-20 02:17
    Received on time
    Simón
    Spain
    5 stars
    2026-09-20 01:55
    Everything is correct. Very fast!!!!! Excellent!!!! To *****
    Lorenzo Caputo
    Italy
    5 stars
    2026-09-19 09:31
    They look a little light in weight, I hope they hold the current of the original datasheet
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