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Transistors - Bipolar (BJT) - RF
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2N3501
Active
Transistors - Bipolar (BJT) - RF
Description:
BI-POLAR SILICON TRANSISTOR NPN
Manufacturer:
Solid State
Datasheet:
2N3501 Datasheet
History Price: $0.50000
In Stock: 19400
Specification
PDF Datasheet
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2N3501 vs 2N3496
Part No
2N3501
2N3496
Category
Transistors - Bipolar (BJT) - RF
Transistors - Bipolar (BJT) - RF
Manufacturer
Solid State
Microchip Technology
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Active
Transistor Type
NPN
PNP
Voltage - Collector Emitter Breakdown (Max)
150V
80V
Frequency - Transition
150MHz
250MHz
Noise Figure (dB Typ @ f)
-
-
Gain
-
-
Power - Max
1W
600mW
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
35 @ 100mA, 10V
Current - Collector (Ic) (Max)
300mA
100mA
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
-65 ℃ ~ 200 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
TO-206AA, TO-18-3 Metal Can
Supplier Device Package
TO-39
TO-18 (TO-206AA)
