Technical Parameter
Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
9A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 4 A
Speed
No Recovery Time >500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
5 μA @ 650 V
Capacitance @ Vr, F
186pF @ 1V, 1MHz
Mounting Type
Through Hole
Supplier Device Package
TO-220-2
Operating Temperature - Junction
-55 ℃ ~ 175 ℃
