Technical Parameter
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25℃
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
208mOhm @ 12A, 15V
Vgs(th) (Max) @ Id
2.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
1272 pF @ 1000 V
Power Dissipation (Max)
175W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
