Technical Parameter
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25℃
16A (Ta)
Rds On (Max) @ Id, Vgs
19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Vgs(th) (Max) @ Id
2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
230pF @ 15V, 590pF @ 15V
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
