H5AN8G6NDJR-XNC
H5AN8G6NDJR-XNC
Active
Description:  IC DRAM DDR4 8Gb 3200Mbps
Manufacturer:  SK Hynix
History Price: $0
In Stock: 41330
H5AN8G6NDJR-XNC Specification
Specification
Part No
H5AN8G6NDJR-XNC
Category
Memory
Manufacturer
SK Hynix
Series
-
Packaging
Tray
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Memory Type
Volatile
Memory Format
DRAM
Technology
DDR4
Memory Size
8Gb
Memory Organization
x16
Memory Interface
Parallel
Clock Frequency
-
Write Cycle Time - Word, Page
-
Access Time
-
Voltage - Supply
-
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
FCBGA
Supplier Device Package
FCBGA
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H5AN8G6NDJR-XNC Description
The SK Hynix H5AN8G6NDJR-XNC is a high-performance DRAM (Dynamic Random Access Memory) chip designed for various applications, including mobile devices, consumer electronics, and computing systems. This memory chip is part of SK Hynix's extensive portfolio of DRAM products, known for their reliability, speed, and efficiency.

## Key Features

1. Memory Type: The H5AN8G6NDJR-XNC is a DDR4 (Double Data Rate 4) SDRAM, which is the fourth generation of DDR memory technology. DDR4 offers improved performance and efficiency compared to its predecessor, DDR3.

2. Density: This specific DRAM chip has a density of 8 Gigabits (Gb), which translates to 1 Gigabyte (GB) of memory when configured in a standard 8-bit wide data bus. This density is suitable for a wide range of applications, providing ample memory for data storage and processing.

3. Data Rate: The H5AN8G6NDJR-XNC supports data rates of up to 2400 MT/s (megatransfers per second). This high data rate allows for faster data transfer between the memory and the processor, enhancing overall system performance.

4. Voltage: The chip operates at a low voltage of 1.2V, which is a significant reduction compared to DDR3 memory that typically operates at 1.5V. This lower voltage contributes to reduced power consumption, making it ideal for battery-powered devices and energy-efficient applications.

5. Package Type: The H5AN8G6NDJR-XNC is available in a compact FBGA (Fine Ball Grid Array) package, which allows for efficient space utilization on printed circuit boards (PCBs). The package size is typically 78 balls, with a pitch of 0.8 mm, making it suitable for modern, space-constrained designs.

6. Latency: The memory chip features a CAS (Column Address Strobe) latency of CL15, which indicates the number of clock cycles it takes to access a specific column of data in the memory. A lower CAS latency generally results in better performance, especially in applications requiring quick data access.

7. Burst Length: The H5AN8G6NDJR-XNC supports a burst length of 8, which allows for efficient data transfer by enabling multiple data words to be read or written in a single operation. This feature enhances the memory's throughput and overall performance.

8. Temperature Range: The chip is designed to operate within a standard temperature range, typically from 0°C to 85°C, making it suitable for consumer electronics and general computing applications.

## Applications

The SK Hynix H5AN8G6NDJR-XNC DRAM chip is versatile and can be used in various applications, including:

- Mobile Devices: Smartphones and tablets benefit from the high-speed performance and low power consumption of DDR4 memory, enhancing user experience and battery life.
- Consumer Electronics: Devices such as smart TVs, gaming consoles, and set-top boxes utilize this memory for improved performance and responsiveness.
- Computing Systems: Laptops and desktops can leverage the H5AN8G6NDJR-XNC for faster data processing and multitasking capabilities, making it suitable for both casual and professional use.
- Embedded Systems: The chip can be integrated into embedded applications, including IoT devices, automotive systems, and industrial automation, where reliability and efficiency are critical.

## Conclusion

The SK Hynix H5AN8G6NDJR-XNC is a high-performance DDR4 DRAM chip that offers a combination of speed, efficiency, and reliability. With its 8 Gb density, low operating voltage, and high data rates, it is well-suited for a wide range of applications in mobile devices, consumer electronics, and computing systems. As technology continues to evolve, the demand for efficient and high-speed memory solutions like the H5AN8G6NDJR-XNC will remain strong, making it a valuable component in modern electronic designs.
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  • Customer Reviews
    4.95 out of 5.00 stars from 67 customer reviews from all over the world
    Diane Bennett
    United States
    5 stars
    2026-03-11 14:57
    Fast shipping. Packaged well. Receieved everything. Thanks!
    Arianna Fontana
    Italy
    5 stars
    2026-03-11 13:46
    great price, fast shipment and quality components
    Chloé Charpentier
    France
    5 stars
    2026-03-11 10:19
    Product conforms to the announcement sending neat and very fast thank you
    Simon Gagnon
    France
    5 stars
    2026-03-11 10:05
    Very well received fast delivery I recommend the seller
    Daniele Gallo
    Italy
    5 stars
    2026-03-11 09:13
    All ok, material arrived on schedule, seller recommended
    Renata Almeida
    Brazil
    5 stars
    2026-03-11 08:38
    Arrived well packed, works perfectly.