2N5246
2N5246
Obsolete
Description:  SMALL SIGNAL FET
Manufacturer:  Fairchild Semiconductor
Datasheet:   2N5246 Datasheet
History Price: $0.30000
In Stock: 29800
2N5246 Specification
Specification
Part No
2N5246
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Fairchild Semiconductor
Series
-
Packaging
Bulk
Status
Obsolete
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Transistor Type
N-Channel JFET
Frequency
-
Gain
-
Voltage - Test
-
Current Rating (Amps)
7mA
Noise Figure
-
Current - Test
-
Power - Output
-
Voltage - Rated
30 V
Mounting Type
-
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
2N5246 PDF Datasheet
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2N5246 Description

## Overview of Fairchild Semiconductor 2N5246

The Fairchild Semiconductor 2N5246 is a high-performance NPN bipolar junction transistor (BJT) designed primarily for medium- to high-power switching and amplification applications. With robust construction and reliable performance, the 2N5246 is ideal for use in audio, automotive, and industrial electronics where low to moderate frequency amplification and efficient switching are required. This transistor offers excellent thermal stability and low saturation voltage, making it suitable for demanding environments.

## Key Features

* High Voltage Rating: The 2N5246 offers a maximum collector-to-emitter voltage (V\_CEO) of 80 V, enabling its use in circuits that require moderate voltage tolerance.

* High Current Handling Capability: With a maximum continuous collector current (I\_C) of 15 A, it is well-suited for power-switching applications that require high current handling.

* Low Saturation Voltage: The transistor features low V\_CE(sat) (collector-emitter saturation voltage), minimizing power losses during operation and enhancing system efficiency.

* Good Thermal Stability: The 2N5246 offers a good thermal performance, providing stable operation even at high temperatures, which is crucial in power applications where heat management is important.

* General-Purpose Use: Its versatility makes it suitable for a wide range of applications, from signal amplification to power switching, in consumer, industrial, and automotive systems.

## Specifications

* Collector-Emitter Voltage (V\_CEO): 80 V – This rating indicates the maximum voltage that can be applied between the collector and emitter terminals without causing breakdown.

* Collector-Base Voltage (V\_CBO): 80 V – The maximum voltage that can be applied between the collector and base terminals, ensuring the transistor can handle substantial voltage stress without failure.

* Emitter-Base Voltage (V\_EBO): 5 V – The maximum voltage that can be applied between the emitter and base terminals.

* Continuous Collector Current (I\_C): 15 A – The maximum current the transistor can safely handle through the collector terminal during continuous operation.

* Peak Collector Current (I\_C, peak): 30 A – The maximum pulse current the transistor can tolerate without damage. This makes the device suitable for high-power pulsed applications.

* DC Current Gain (h\_FE): 25 to 150 – This specifies the range of current gain for the transistor at a specified collector current (I\_C) and base current (I\_B). A higher h\_FE indicates greater amplification capabilities.

* Saturation Voltage (V\_CE(sat)): 2 V (max) at I\_C = 10 A, I\_B = 1 A – The voltage drop across the collector-emitter junction when the transistor is fully saturated. Lower values are preferable for minimizing power dissipation during switching.

* Power Dissipation (P\_D): 100 W – This indicates the maximum amount of power the transistor can dissipate without overheating. A high power dissipation rating is essential in high-power applications to avoid thermal failure.

* Thermal Resistance (R\_thJC): 1.25°C/W – This thermal resistance rating indicates the ability of the transistor to dissipate heat. A lower value indicates better heat management and is important for maintaining performance under load.

* Operating Junction Temperature (T\_j): -65°C to +200°C – This wide temperature range ensures the 2N5246 can perform reliably in both standard and harsh environmental conditions, such as automotive and industrial applications.

## Applications

The Fairchild Semiconductor 2N5246 is suitable for various applications requiring high current and moderate voltage levels, including:

1. Power Switching Circuits: The 2N5246 is often used in power switching applications where it functions as a high-power switch, such as in power supplies, motor controllers, and audio amplifiers.

2. Audio Amplifiers: With its ability to handle high current and its stable operation at high temperatures, it is commonly used in audio amplifier designs, particularly in high-power audio amplifiers for professional audio equipment.

3. Industrial Automation Systems: The transistor is ideal for use in industrial circuits, such as for controlling motors, solenoids, and other high-power devices that require fast and reliable switching.

4. Automotive Systems: Its automotive-grade reliability and robustness make the 2N5246 a good choice for use in automotive power electronics, such as in battery management systems, alternators, and lighting systems.

5. Relay Drivers: The transistor can be used to drive relays in automation and control systems, where efficient switching of higher currents is required.

6. Pulse Power Applications: With its ability to handle peak currents of up to 30 A, the 2N5246 is useful in circuits that require short bursts of high current, such as in pulse-width modulation (PWM) and pulse power systems.

## Performance Considerations

* Thermal Management: Due to its high power dissipation rating, the 2N5246 requires good thermal management practices, such as heat sinks or efficient PCB design, to ensure it operates within safe temperature limits.

* Switching Speed: While it is optimized for general-purpose switching, the 2N5246 may not be suitable for very high-speed switching applications compared to MOSFETs or other devices specifically designed for high-frequency operation.

* Gate Drive Requirements: As a BJT, the 2N5246 requires base current to operate effectively. Proper drive circuitry is essential to ensure it switches efficiently without entering saturation for extended periods.

* Current Amplification: With a h\_FE range of 25 to 150, the transistor offers good amplification, but designers must ensure that the transistor operates within its current gain range to avoid performance degradation.

* Protection Against Overload: While the 2N5246 is robust, it’s essential to protect the transistor from overvoltage and overcurrent conditions using proper fuses or current-limiting circuitry, especially in automotive or industrial environments.

## Conclusion

The Fairchild Semiconductor 2N5246 is a versatile and reliable NPN transistor suitable for medium-to-high power applications. It is widely used in power switching circuits, audio amplification, industrial systems, and automotive electronics. With its high current handling, low saturation voltage, and good thermal stability, it offers reliable performance in a variety of applications. However, attention to thermal management and proper drive circuitry is essential to fully exploit its capabilities, especially in high-power scenarios.
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  • Customer Reviews
    4.95 out of 5.00 stars from 154 customer reviews from all over the world
    Zé Maria Almeida
    Brazil
    5 stars
    2026-04-02 05:57
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    Spain
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    2026-04-02 05:18
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    Samuel Felipe
    Spain
    5 stars
    2026-04-02 03:28
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    Lucas Rafael
    Brazil
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    2026-04-01 22:56
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    Brazil
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    2026-04-01 17:50
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    Keith Washington
    United States
    5 stars
    2026-04-01 14:37
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