Diode Type
Silicon Carbide Schottky
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
1200 V
Current - Average Rectified (Io)
10A
50A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
1.7 V @ 50 A
Speed
No Recovery Time >500mA (Io)
No Recovery Time >500mA (Io)
Reverse Recovery Time (trr)
0 ns
0 ns
Current - Reverse Leakage @ Vr
60 μA @ 650 V
400 μA @ 1200 V
Capacitance @ Vr, F
327pF @ 1V, 1MHz
2.34nF @ 1V, 1MHz
Mounting Type
Through Hole
Through Hole
Package / Case
TO-220-2
TO-247-2
Supplier Device Package
TO-220-2
TO-247-2
Operating Temperature - Junction
-55 ℃ ~ 175 ℃
-55 ℃ ~ 175 ℃
