RM100N65DF
RM100N65DF
Active
Description:  MOSFET N-CHANNEL 65V 100A 8DFN
Manufacturer:  Rectron Limited
Datasheet:   RM100N65DF Datasheet
History Price: $0.65000
In Stock: 10800
RM100N65DF vs RM12P30S8
Series
-
-
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
65 V
30 V
Current - Continuous Drain (Id) @ 25℃
100A (Tc)
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 20A, 10V
15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
-
-
Vgs (Max)
+20V, -12V
?0V
Input Capacitance (Ciss) (Max) @ Vds
9500 pF @ 25 V
1750 pF @ 15 V
FET Feature
-
-
Power Dissipation (Max)
142W (Tc)
3W (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
8-DFN (5x6)
8-SOP
Package / Case
8-PowerVDFN
8-SOIC (0.154", 3.90mm Width)