JAN1N1126RA
JAN1N1126RA
Active
Description:  DIODE GEN PURP 400V DO203AA
Manufacturer:  Microchip Technology
Datasheet:   JAN1N1126RA Datasheet
History Price: Active
In Stock: 14260
JAN1N1126RA vs JANTXV1N6864US
Series
Military, MIL-PRF-19500/260
Military, MIL-PRF-19500/620
Packaging
Bulk
Bulk
Status
Active
Active
Diode Type
Standard
Schottky
Voltage - DC Reverse (Vr) (Max)
400 V
80 V
Current - Average Rectified (Io)
-
3A
Voltage - Forward (Vf) (Max) @ If
2.2 V @ 10 A
700 mV @ 3 A
Speed
Standard Recovery >500ns, >200mA (Io)
Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr)
-
-
Current - Reverse Leakage @ Vr
5 μA @ 400 V
150 μA @ 80 V
Capacitance @ Vr, F
-
-
Mounting Type
Stud Mount
Surface Mount
Package / Case
DO-203AA, DO-4, Stud
DO-213AA
Supplier Device Package
DO-203AA (DO-4)
DO-213AA
Operating Temperature - Junction
-65 ℃ ~ 150 ℃
-65 ℃ ~ 125 ℃