Diode Type
Silicon Carbide Schottky
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
650 V
Current - Average Rectified (Io)
8A
20A
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 8 A
1.65 V @ 30 A
Speed
No Recovery Time >500mA (Io)
No Recovery Time >500mA (Io)
Reverse Recovery Time (trr)
0 ns
-
Current - Reverse Leakage @ Vr
20 μA @ 650 V
75 μA @ 650 V
Capacitance @ Vr, F
336pF @ 1V, 1MHz
1247pF @ 1V, 1MHz
Mounting Type
Through Hole
Through Hole
Package / Case
TO-220-2
TO-220-2
Supplier Device Package
TO-220-2
TO-220-2
Operating Temperature - Junction
-55 ℃ ~ 175 ℃
-55 ℃ ~ 175 ℃
