FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
30 V
Current - Continuous Drain (Id) @ 25℃
7.9A (Ta)
3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
4.5V, 10V
Rds On (Max) @ Id, Vgs
22mOhm @ 7.9A, 10V
130mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
830 pF @ 15 V
205 pF @ 15 V
Power Dissipation (Max)
2.5W (Ta)
2.5W (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
8-SOIC
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
8-SOIC (0.154", 3.90mm Width)
