Series
eGaN
Automotive, AEC-Q101, eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
FET Type
N-Channel
N-Channel
Technology
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
40 V
80 V
Current - Continuous Drain (Id) @ 25℃
4A (Ta)
1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
5V
Rds On (Max) @ Id, Vgs
110mOhm @ 500mA, 5V
80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id
2.5V @ 250μA
2.5V @ 600μA
Gate Charge (Qg) (Max) @ Vgs
0.45 nC @ 5 V
0.83 nC @ 5 V
Vgs (Max)
+6V, -4V
+5.75V, -4V
Input Capacitance (Ciss) (Max) @ Vds
52 pF @ 20 V
88 pF @ 50 V
Power Dissipation (Max)
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
Die
Die
