EPC2100ENGRT
EPC2100ENGRT
Active
Description:  GANFET 2 N-CH 30V 9.5A/38A DIE
Manufacturer:  EPC
History Price: $4.94760
In Stock: 13185
EPC2100ENGRT vs EPC2103
Manufacturer
Series
eGaN
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
2 N-Channel (Half Bridge)
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
30V
80V
Current - Continuous Drain (Id) @ 25℃
10A (Ta), 40A (Ta)
28A
Rds On (Max) @ Id, Vgs
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
5.5mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 4mA, 2.5V @ 16mA
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
4.9nC @ 15V, 19nC @ 15V
6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
475pF @ 15V, 1960pF @ 15V
760pF @ 40V
Power - Max
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Package / Case
Die
Die
Supplier Device Package
Die
Die