EPC2016
EPC2016
Discontinued
Description:  GANFET N-CH 100V 11A DIE
Manufacturer:  EPC
Datasheet:   EPC2016 Datasheet
History Price: Discontinued at Digi-Key
In Stock: 45000
EPC2016 vs EPC2070
Part No
Manufacturer
Series
eGaN
-
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Discontinued
Active
FET Type
N-Channel
-
Technology
GaNFET (Gallium Nitride)
-
Drain to Source Voltage (Vdss)
100 V
-
Current - Continuous Drain (Id) @ 25℃
11A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
5V
-
Rds On (Max) @ Id, Vgs
16mOhm @ 11A, 5V
-
Vgs(th) (Max) @ Id
2.5V @ 3mA
-
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 5 V
-
Vgs (Max)
+6V, -5V
-
Input Capacitance (Ciss) (Max) @ Vds
520 pF @ 50 V
-
FET Feature
-
-
Power Dissipation (Max)
-
-
Operating Temperature
-40 ℃ ~ 125 ℃ (TJ)
-
Mounting Type
Surface Mount
-
Supplier Device Package
Die
-
Package / Case
Die
-