EPC2001C
EPC2001C
Active
Description:  GANFET N-CH 100V 36A DIE OUTLINE
Manufacturer:  EPC
Datasheet:   EPC2001C Datasheet
History Price: $4.70000
In Stock: 41885
EPC2001C vs EPC2034C
Part No
Manufacturer
Series
eGaN
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100 V
200 V
Current - Continuous Drain (Id) @ 25℃
36A (Ta)
48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
5V
Rds On (Max) @ Id, Vgs
7mOhm @ 25A, 5V
8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 5mA
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 5 V
11 nC @ 5 V
Vgs (Max)
+6V, -4V
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 50 V
1140 pF @ 100 V
FET Feature
-
-
Power Dissipation (Max)
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
Die
Die
Package / Case
Die
Die