FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
400 V
Current - Continuous Drain (Id) @ 25℃
990mA (Tc)
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1A, 10V
400mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
-
110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
-
Power Dissipation (Max)
725mW (Ta), 6.25W (Tc)
4W (Ta), 150W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-205AD (TO-39)
TO-3
Package / Case
TO-205AD, TO-39-3 Metal Can
TO-204AE
