MMBT2907A
MMBT2907A
Active
Description:  TRANS PNP 60V 0.6A SOT23
Manufacturer:  Yangjie Technology
Datasheet:   MMBT2907A Datasheet
History Price: $0.21000
In Stock: 34100
MMBT2907A Specification
Specification
Part No
MMBT2907A
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Yangjie Technology
Series
-
Packaging
Tape & Reel (TR)
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Transistor Type
PNP
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 15mA, 150mA
Current - Collector Cutoff (Max)
50nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
300 mW
Frequency - Transition
200MHz
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23
MMBT2907A PDF Datasheet
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MMBT2907A Description
Introduction to STMicroelectronics MMBT2907A

The MMBT2907A is a high-performance NPN bipolar junction transistor (BJT) manufactured by STMicroelectronics. This transistor is designed for general-purpose amplification and switching applications, making it a popular choice in various electronic circuits. The MMBT2907A is particularly valued for its reliability, versatility, and ease of integration into both analog and digital systems.

Key Specifications

- Type: NPN Bipolar Junction Transistor (BJT)

- Package Type: The MMBT2907A comes in a surface-mount SOT-23 package, which provides a compact footprint ideal for space-constrained applications. The SOT-23 package typically measures 2.9 mm x 1.3 mm x 1.1 mm.

- Maximum Collector Current (Ic): The transistor can handle a maximum collector current of 600 mA, making it suitable for driving loads in various applications.

- Collector-Emitter Voltage (Vce): The maximum collector-emitter voltage is rated at 40 V. This allows the MMBT2907A to operate effectively in circuits where higher voltage levels are present.

- Emitter-Base Voltage (Veb): The maximum emitter-base voltage is specified at 5 V, which is important for ensuring the transistor operates within safe limits during reverse bias conditions.

- DC Current Gain (hFE): The DC current gain ranges from 100 to 300 at a collector current of 10 mA. This high gain allows for efficient amplification of input signals.

- Transition Frequency (fT): The transition frequency is approximately 250 MHz, indicating the frequency range over which the transistor can effectively amplify signals without significant degradation.

- Thermal Resistance: The thermal resistance from junction to ambient is typically around 250 °C/W. This parameter is crucial for understanding how well the device can dissipate heat during operation.

- Operating Temperature Range: The MMBT2907A operates reliably over a temperature range of -55 °C to +150 °C, making it suitable for use in harsh environments.

Applications

The MMBT2907A is widely used in various applications due to its versatility:

- Amplification Circuits: It serves as an amplifier in audio equipment, signal processing devices, and other electronic systems that require signal enhancement.

- Switching Applications: Commonly utilized in low-power switching circuits, such as relay drivers and motor control systems, where it can efficiently turn on or off connected loads.

- Consumer Electronics: Found in devices such as televisions, radios, and other consumer electronics that require compact and efficient components for signal processing.

- Communication Systems: Employed in RF amplifiers and other communication equipment where high-frequency performance is essential.

Advantages

The MMBT2907A offers several advantages that make it a preferred choice among designers:

- Compact Size: The SOT-23 package allows for easy integration into small circuit boards without occupying significant space.

- High Performance: With its high current gain and transition frequency, the MMBT2907A provides reliable performance across various frequencies and load conditions.

- Robustness: Designed to withstand extreme temperatures and voltages, this transistor ensures long-term reliability even under challenging operating conditions.

- Cost-effective Solution: As a widely used component with established manufacturing processes, the MMBT2907A offers an economical solution for many electronic designs.

Conclusion

The STMicroelectronics MMBT2907A NPN transistor is a versatile component that excels in both amplification and switching applications. Its robust specifications, including high current handling capabilities and wide operating temperature range, make it an excellent choice for engineers looking to implement reliable solutions in their designs. With its compact size and solid performance characteristics, the MMBT2907A continues to be a staple component across various industries such as consumer electronics, telecommunications, and industrial automation.
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  • Customer Reviews
    4.95 out of 5.00 stars from 97 customer reviews from all over the world
    Xuxa Almeida Silva
    Brazil
    5 stars
    2026-03-30 11:23
    Fast delivery, the product description
    Egidijus Petras
    Lithuania
    5 stars
    2026-03-30 08:37
    Got it on time. Thank you. Recommend
    Frank Long
    United States
    5 stars
    2026-03-30 03:47
    Items received and working fine. Super stable output.
    Javier
    Spain
    5 stars
    2026-03-29 20:37
    Just like the removed from a power supply plate.
    João Paulo
    Brazil
    5 stars
    2026-03-29 00:54
    The product was tested and so far in test working perfectly.
    Brazil
    5 stars
    2026-03-29 00:44
    Work very well, I recommend.