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/ Samsung Semiconductor K4B2G1646F-BCMA
K4B2G1646F-BCMA
EOL
Memory
Description:
IC DRAM DDR3 2 Gb 1866 Mbps
Manufacturer:
Samsung Semiconductor
Datasheet:
K4B2G1646F-BCMA Datasheet
History Price: $0
In Stock: 18400
Specification
PDF Datasheet
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K4B2G1646F-BCMA vs K4B2G1646F-BFMA
Part No
K4B2G1646F-BCMA
K4B2G1646F-BFMA
Category
Memory
Memory
Manufacturer
Samsung Semiconductor
Samsung Semiconductor
Series
-
-
Packaging
Tray
Tray
Status
EOL
EOL
Memory Type
Volatile
Volatile
Memory Format
DRAM
DRAM
Technology
DDR3
DDR3
Memory Size
2 Gb
2 Gb
Memory Organization
128M x 16
128M x 16
Memory Interface
Parallel
Parallel
Clock Frequency
-
-
Write Cycle Time - Word, Page
-
-
Access Time
-
-
Voltage - Supply
1.5 V
1.35 V
Operating Temperature
0 ~ 85 ℃
-40 ~ 95 ℃
Mounting Type
Surface Mount
Surface Mount
Package / Case
96 FBGA
96 FBGA
Supplier Device Package
96 FBGA
96 FBGA
