Driven Configuration
Low-Side
Low-Side
Channel Type
Single
Independent
Gate Type
IGBT, N-Channel, P-Channel MOSFET
IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply
8.5V ~ 35V
4.5V ~ 35V
Logic Voltage - VIL, VIH
0.8V, 3.5V
0.8V, 3V
Current - Peak Output (Source, Sink)
30A, 30A
4A, 4A
Input Type
Inverting, Non-Inverting
Non-Inverting
High Side Voltage - Max (Bootstrap)
-
-
Rise / Fall Time (Typ)
18ns, 16ns
9ns, 8ns
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 125 ℃ (TA)
Mounting Type
Surface Mount
Through Hole
Package / Case
28-SOIC (0.295", 7.50mm Width)
8-DIP (0.300", 7.62mm), 6 Leads
Supplier Device Package
28-SOIC
8-DIP
