IXDN602SI
IXDN602SI
Active
Description:  IC GATE DRVR LOW-SIDE 8SOIC
Manufacturer:  IXYS Corporation
Datasheet:   IXDN602SI Datasheet
History Price: $2.63000
In Stock: 48500
IXDN602SI vs IXDN614PI
Series
-
-
Packaging
Tube
Tube
Status
Active
Active
Driven Configuration
Low-Side
Low-Side
Channel Type
Independent
Single
Number of Drivers
2
1
Gate Type
IGBT, N-Channel, P-Channel MOSFET
IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply
4.5V ~ 35V
4.5V ~ 35V
Logic Voltage - VIL, VIH
0.8V, 3V
0.8V, 3V
Current - Peak Output (Source, Sink)
2A, 2A
14A, 14A
Input Type
Non-Inverting
Non-Inverting
High Side Voltage - Max (Bootstrap)
-
-
Rise / Fall Time (Typ)
7.5ns, 6.5ns
25ns, 18ns
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Through Hole
Package / Case
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-DIP (0.300", 7.62mm)
Supplier Device Package
8-SOIC-EP
8-DIP