Diode Type
Silicon Carbide Schottky
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
650 V
Current - Average Rectified (Io)
50A
10A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 50 A
1.7 V @ 10 A
Speed
No Recovery Time >500mA (Io)
No Recovery Time >500mA (Io)
Reverse Recovery Time (trr)
0 ns
0 ns
Current - Reverse Leakage @ Vr
400 μA @ 1200 V
120 μA @ 650 V
Capacitance @ Vr, F
2.34nF @ 1V, 1MHz
654pF @ 1V, 1MHz
Mounting Type
Through Hole
Through Hole
Package / Case
TO-247-2
TO-247-3
Supplier Device Package
TO-247-2
TO-247-3
Operating Temperature - Junction
-55 ℃ ~ 175 ℃
-55 ℃ ~ 175 ℃
