Technology
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
30 V
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Current - Continuous Drain (Id) @ 25℃
3.4A (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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Rds On (Max) @ Id, Vgs
130mOhm @ 1A, 10V
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Vgs(th) (Max) @ Id
3V @ 250μA
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Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 5 V
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Input Capacitance (Ciss) (Max) @ Vds
205 pF @ 15 V
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Power Dissipation (Max)
2.5W (Ta)
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Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
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Mounting Type
Surface Mount
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Supplier Device Package
8-SOIC
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Package / Case
8-SOIC (0.154", 3.90mm Width)
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