EPC8009
EPC8009
Active
Description:  GANFET N-CH 65V 4A DIE
Manufacturer:  EPC
Datasheet:   EPC8009 Datasheet
History Price: $3.31000
In Stock: 18225
EPC8009 vs EPC2054
Part No
Manufacturer
Series
eGaN
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
65 V
200 V
Current - Continuous Drain (Id) @ 25℃
4A (Ta)
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
5V
Rds On (Max) @ Id, Vgs
130mOhm @ 500mA, 5V
43mOhm @ 1A, 5V
Vgs(th) (Max) @ Id
2.5V @ 250μA
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.45 nC @ 5 V
4.3 nC @ 5 V
Vgs (Max)
+6V, -4V
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
52 pF @ 32.5 V
573 pF @ 100 V
FET Feature
-
-
Power Dissipation (Max)
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
Die
Die
Package / Case
Die
Die