Series
Automotive, AEC-Q101, eGaN
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
FET Type
N-Channel
N-Channel
Technology
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
15 V
65 V
Current - Continuous Drain (Id) @ 25℃
3.4A (Ta)
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
5V
Rds On (Max) @ Id, Vgs
26mOhm @ 1.5A, 5V
530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id
2.5V @ 1mA
2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
1.1 nC @ 5 V
-
Vgs (Max)
+6V, -4V
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
118 pF @ 7.5 V
21 pF @ 32.5 V
Power Dissipation (Max)
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
Die
Die
