EPC2107
EPC2107
Active
Description:  GANFET 3 N-CH 100V 9BGA
Manufacturer:  EPC
Datasheet:   EPC2107 Datasheet
History Price: $1.92000
In Stock: 9200
EPC2107 vs EPC2102
Part No
Manufacturer
Series
eGaN
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
3 N-Channel (Half Bridge + Synchronous Bootstrap)
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100V
60V
Current - Continuous Drain (Id) @ 25℃
1.7A, 500mA
23A
Rds On (Max) @ Id, Vgs
320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
4.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 100μA, 2.5V @ 20μA
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
0.16nC @ 5V, 0.044nC @ 5V
6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
16pF @ 50V, 7pF @ 50V
830pF @ 30V
Power - Max
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Package / Case
9-VFBGA
Die
Supplier Device Package
9-BGA (1.35x1.35)
Die