EPC2103
EPC2103
Active
Description:  GAN TRANS SYMMETRICAL HALF BRIDG
Manufacturer:  EPC
Datasheet:   EPC2103 Datasheet
History Price: $8.75000
In Stock: 14260
EPC2103 vs EPC2110ENGRT
Manufacturer
Series
eGaN
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
2 N-Channel (Half Bridge)
2 N-Channel (Dual) Common Source
FET Feature
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
80V
120V
Current - Continuous Drain (Id) @ 25℃
28A
3.4A
Rds On (Max) @ Id, Vgs
5.5mOhm @ 20A, 5V
60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id
2.5V @ 7mA
2.5V @ 700μA
Gate Charge (Qg) (Max) @ Vgs
6.5nC @ 5V
0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 40V
80pF @ 60V
Power - Max
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Package / Case
Die
Die
Supplier Device Package
Die
Die