Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Not For New Designs
Active
FET Type
N-Channel
N-Channel
Technology
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
200 V
40 V
Current - Continuous Drain (Id) @ 25℃
48A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
5V
-
Rds On (Max) @ Id, Vgs
10mOhm @ 20A, 5V
-
Vgs(th) (Max) @ Id
2.5V @ 7mA
-
Gate Charge (Qg) (Max) @ Vgs
8.8 nC @ 5 V
-
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 100 V
-
Power Dissipation (Max)
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-
Mounting Type
Surface Mount
-
Supplier Device Package
Die
-
