Packaging
Tape & Reel (TR)
Tray
FET Type
N-Channel
N-Channel
Technology
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
40 V
60 V
Current - Continuous Drain (Id) @ 25℃
10A (Ta)
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
5V
Rds On (Max) @ Id, Vgs
16mOhm @ 10A, 5V
580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2mA
2.5V @ 140μA
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 5 V
-
Vgs (Max)
+6V, -4V
+7V, -4V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 20 V
22 pF @ 30 V
Power Dissipation (Max)
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
Die
4-SMD
Package / Case
Die
4-SMD, No Lead
