EPC2014C
EPC2014C
Active
Description:  GANFET N-CH 40V 10A DIE OUTLINE
Manufacturer:  EPC
Datasheet:   EPC2014C Datasheet
History Price: $1.53000
In Stock: 1700
EPC2014C vs EPC2070
Part No
Manufacturer
Series
eGaN
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Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
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Technology
GaNFET (Gallium Nitride)
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Drain to Source Voltage (Vdss)
40 V
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Current - Continuous Drain (Id) @ 25℃
10A (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
5V
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Rds On (Max) @ Id, Vgs
16mOhm @ 10A, 5V
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Vgs(th) (Max) @ Id
2.5V @ 2mA
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Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 5 V
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Vgs (Max)
+6V, -4V
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Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 20 V
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FET Feature
-
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Power Dissipation (Max)
-
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Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
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Mounting Type
Surface Mount
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Supplier Device Package
Die
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Package / Case
Die
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