EPC2012C
EPC2012C
Active
Description:  GANFET N-CH 200V 5A DIE OUTLINE
Manufacturer:  EPC
Datasheet:   EPC2012C Datasheet
History Price: $2.76000
In Stock: 39500
EPC2012C vs EPC2067
Part No
Manufacturer
Series
eGaN
-
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
200 V
40 V
Current - Continuous Drain (Id) @ 25℃
5A (Ta)
69A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
5V
Rds On (Max) @ Id, Vgs
100mOhm @ 3A, 5V
1.55mOhm @ 37A, 5V
Vgs(th) (Max) @ Id
2.5V @ 1mA
2.5V @ 18mA
Gate Charge (Qg) (Max) @ Vgs
1.3 nC @ 5 V
22.3 nC @ 5 V
Vgs (Max)
+6V, -4V
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 100 V
3267 pF @ 20 V
FET Feature
-
-
Power Dissipation (Max)
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
Die
Die
Package / Case
Die
Die