EPC2012
EPC2012
Discontinued
Description:  GANFET N-CH 200V 3A DIE
Manufacturer:  EPC
Datasheet:   EPC2012 Datasheet
History Price: Discontinued at Digi-Key
In Stock: 8400
EPC2012 vs EPC2034
Part No
Manufacturer
Series
eGaN
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Discontinued
Not For New Designs
FET Type
N-Channel
N-Channel
Technology
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
200 V
200 V
Current - Continuous Drain (Id) @ 25℃
3A (Ta)
48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
5V
Rds On (Max) @ Id, Vgs
100mOhm @ 3A, 5V
10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 1mA
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 5 V
8.8 nC @ 5 V
Vgs (Max)
+6V, -5V
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
145 pF @ 100 V
950 pF @ 100 V
FET Feature
-
-
Power Dissipation (Max)
-
-
Operating Temperature
-40 ℃ ~ 125 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
Die
Die
Package / Case
Die
Die