EPC2010C
EPC2010C
Active
Description:  GANFET N-CH 200V 22A DIE OUTLINE
Manufacturer:  EPC
Datasheet:   EPC2010C Datasheet
History Price: $6.57000
In Stock: 27300
EPC2010C vs EPC2308ENGRT
Manufacturer
Series
eGaN
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Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
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Technology
GaNFET (Gallium Nitride)
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Drain to Source Voltage (Vdss)
200 V
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Current - Continuous Drain (Id) @ 25℃
22A (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
5V
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Rds On (Max) @ Id, Vgs
25mOhm @ 12A, 5V
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Vgs(th) (Max) @ Id
2.5V @ 3mA
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Gate Charge (Qg) (Max) @ Vgs
5.3 nC @ 5 V
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Vgs (Max)
+6V, -4V
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Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 100 V
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FET Feature
-
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Power Dissipation (Max)
-
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Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
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Mounting Type
Surface Mount
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Supplier Device Package
Die
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Package / Case
Die
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