EMB10T2R
EMB10T2R
Active
Description:  TRANS 2PNP PREBIAS 0.15W EMT6
Manufacturer:  Rohm Semiconductor
Datasheet:   EMB10T2R Datasheet
History Price: $0.10844
In Stock: 21600
EMB10T2R vs EMB52T2R
Part No
Series
-
-
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
Transistor Type
2 PNP - Pre-Biased (Dual)
2 PNP Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
50V
Resistor - Base (R1)
2.2kOhms
47kOhms
Resistor - Emitter Base (R2)
47kOhms
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250μA, 5mA
150mV @ 500μA, 5mA
Current - Collector Cutoff (Max)
500nA
500nA
Frequency - Transition
250MHz
250MHz
Power - Max
150mW
150mW
Mounting Type
Surface Mount
Surface Mount
Package / Case
SOT-563, SOT-666
SOT-563, SOT-666
Supplier Device Package
EMT6
EMT6