Diode Type
Silicon Carbide Schottky
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
600 V
Current - Average Rectified (Io)
19A
30A
Voltage - Forward (Vf) (Max) @ If
-
1.8 V @ 10 A
Speed
No Recovery Time >500mA (Io)
No Recovery Time >500mA (Io)
Reverse Recovery Time (trr)
0 ns
0 ns
Current - Reverse Leakage @ Vr
50 μA @ 650 V
50 μA @ 600 V
Capacitance @ Vr, F
480pF @ 0V, 1MHz
480pF @ 0V, 1MHz
Mounting Type
Through Hole
Through Hole
Package / Case
TO-220-2 Isolated Tab
TO-220-2
Supplier Device Package
TO-220-2 Isolated Tab
TO-220-2
Operating Temperature - Junction
-55 ℃ ~ 175 ℃
-55 ℃ ~ 175 ℃
