Diode Type
Silicon Carbide Schottky
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
600 V
650 V
Current - Average Rectified (Io)
19A
-
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 6 A
1.8 V @ 16 A
Speed
No Recovery Time >500mA (Io)
No Recovery Time >500mA (Io)
Reverse Recovery Time (trr)
0 ns
0 ns
Current - Reverse Leakage @ Vr
50 μA @ 600 V
95 μA @ 650 V
Capacitance @ Vr, F
294pF @ 0V, 1MHz
-
Mounting Type
Through Hole
Through Hole
Package / Case
TO-220-2
TO-247-3
Supplier Device Package
TO-220-2
TO-247-3
Operating Temperature - Junction
-55 ℃ ~ 175 ℃
-55 ℃ ~ 175 ℃
