FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
100 V
Current - Continuous Drain (Id) @ 25℃
6.5A (Tc)
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 6.5A, 10V
300mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
34.8 nC @ 10 V
18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
-
-
Power Dissipation (Max)
800mW (Ta), 25W (Tc)
800mW (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-39
TO-39
Package / Case
TO-205AF Metal Can
TO-205AF Metal Can
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