FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
450 V
Current - Continuous Drain (Id) @ 25℃
6.5A (Tc)
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 6.5A, 10V
2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
34.8 nC @ 10 V
-
Input Capacitance (Ciss) (Max) @ Vds
-
800 pF @ 25 V
Power Dissipation (Max)
800mW (Ta), 25W (Tc)
75W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-39
TO-3
Package / Case
TO-205AF Metal Can
TO-204AA, TO-3
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