FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
500 V
Current - Continuous Drain (Id) @ 25℃
3A (Tc)
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 2A, 10V
1.8Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
5.75 nC @ 10 V
40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
-
-
Power Dissipation (Max)
800mW (Ta), 25W (Tc)
4W (Ta), 75W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-39
TO-204AA
Package / Case
TO-205AF Metal Can
TO-204AA, TO-3
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