FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
400 V
Current - Continuous Drain (Id) @ 25℃
12A (Tc)
1.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
500mOhm @ 12A, 10V
3.7Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
-
170 pF @ 25 V
Power Dissipation (Max)
4W (Ta), 150W (Tc)
15W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-3
TO-205AF (TO-39)
Package / Case
TO-204AE
TO-205AF Metal Can
