FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
100 V
Current - Continuous Drain (Id) @ 25℃
14A (Tc)
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 14A, 10V
300mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
-
-
Power Dissipation (Max)
4W (Ta), 150W (Tc)
800mW (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-3
TO-39
Package / Case
TO-204AE
TO-205AF Metal Can
