FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
90 V
100 V
Current - Continuous Drain (Id) @ 25℃
860mA (Tc)
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
10V
Rds On (Max) @ Id, Vgs
4Ohm @ 1A, 10V
180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs
-
6.34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
-
Power Dissipation (Max)
725mW (Ta), 6.25W (Tc)
800mW (Ta), 25W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-39
TO-39
Package / Case
TO-205AD, TO-39-3 Metal Can
TO-205AF Metal Can
